Low voltage sample and hold circuits

ABSTRACT

A very low voltage sampling circuit which is capable of a full ranging output when powered with a very low voltage, e.g., of about 1 volt. A pre-charge circuit is combined with a sample and hold circuit to avoid the need for low threshold switching devices in the sampling circuit, thus avoiding output droop due to the increased leakage of low threshold devices. The pre-charge circuit is placed between the sample and hold circuit and an output of the sampling circuit to `boost` the voltage level of the output of the sample and hold circuit to above a predetermined threshold voltage level. The pre-charge circuit includes an output voltage boost capacitor which is charged before the hold cycle of the sampling circuit. The negative node of the output voltage boost capacitor is charged to a reference voltage based on a range of correction for the output voltage, and the positive node is charged approximately to a level of the input signal itself.

This application is being co-filed with similar application Ser. No.08/953187, entitled "Low Voltage Sample and Hold Circuits", and withsimilar application Ser. No. 08/953,551, entitled "Low Voltage Sampleand Hold Circuits", both of which are explicitly incorporated herein byreference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

This invention relates to circuits for, and methods of, sampling atime-varying input signal. More particularly, it relates to sample andhold circuits for use with a total power supply voltage which is as lowas just a few tenths of a volt greater than the threshold voltage of MOStransistors used in the sample and hold circuits.

2. Background of Related Art

The portability of electronic devices is an important feature in today'ssociety, e.g., as evidenced by the popularity of handheld portablecellular telephones. However, as is well known, a significant portion ofthe size and weight of a portable electronic device is required just forthe power supply of the portable electronic device. To reduce its sizeand/or to increase its operational time between charges, it is desiredthat power consumption of portable electronic devices be minimized. Oneway of accomplishing this goal is to reduce the voltage level of thepower supply. In some instances it is required that the voltage level ofthe power supply be reduced not only to minimize power consumption butalso to comply with the low level electrical limits of fine-lineintegrated circuit technology, which is now approaching line widths ofless than 0.1 μm. The circuitry and line widths in such highlyintegrated devices are scaled down accordingly, based on the desiredpower supply level. Thus, while previous portable electronic devicestypically utilized 5 volt power supplies, power supply levels have morerecently decreased to about 3 volts, and most recently approached atotal power supply of 1.0 volt for many portable electronic devices.

At very low power supply voltages, analog functions become difficult toimplement using MOS transistors exhibiting standard threshold levels. Toturn on an n-channel transistor switch, a voltage greater than thesignal being passed through its channel plus its threshold voltageV_(T),n must be present at its gate. For a p-channel transistor switch,a voltage less than the power supply voltage minus its threshold voltageV_(T),p must be present at its gate.

Conventional CMOS processes feature n-channel devices exhibiting a 0.7volt threshold, and p-channel devices exhibiting a 1.0 volt threshold.For a p-channel transistor to operate as a switch, its gate voltage mustbe at a level at least one threshold voltage V_(T),p below the signalpassed through its channel. With a 1 volt total power supply, the entiresupply voltage is necessary just to turn the p-channel transistor deviceON. The p-channel MOS transistor device 402 would be virtually uselessif employed as a switch with such a low power supply voltage because, asshown in FIG. 6A, it would never turn ON.

On the other hand, although a 1 volt power supply would have sufficientrange to turn an n-channel MOS transistor device 404 ON, FIG. 6B showsthat only about 30% (i.e., 0 to 0.3 volts) of the available signal range(0 to 1 volt) would pass therethrough.

Threshold voltages of standard MOS transistor devices can be loweredusing more costly manufacturing processes, but still exhibitdisadvantages when utilized in sample and hold circuits. For example,using conventional 0.35 μm, 3 volt technology, an n-channel transistordevice has a lower threshold voltage of about 0.5 volts. When operatingas a switch, the n-channel transistor switch can pass signals from about0 volts to 0.5 volts with a 1 volt power supply. On the other hand, ap-channel transistor device using this technology has a lower thresholdvoltage of about 0.8 volts. Thus, the lower threshold voltage p-channeltransistor switch can pass signals from about 0.8 volts to 1.0 voltusing the same 1 volt power supply.

Even if these lower threshold voltage devices are used in parallel usinga 1 volt power supply, voltage inputs in the range of about 0.5 volts to0.8 volts still cannot be passed by either the lower threshold voltagep-channel or the n-channel transistor devices, and thus would not besampled properly.

The 1 volt power supply discussed herein may be a battery cell which is1.2 volts when new, but discharges to about 1.0 volt over its usefullife.

MOS transistor switches are commonly employed in sample and holdcircuits. A sample and hold (S/H) circuit repeatedly captures andmaintains a single sample of either the current or voltage of atime-varying signal long enough for an analog-to-digital converter (ADC)or other subsequent circuit to utilize that stabilized sample. Without asample and hold circuit, the accuracy of the ADC or other circuitryfollowing the sample and hold circuit would deteriorate due to theirvulnerability to fluctuations in the input signal during the length oftime that the sample is being utilized by subsequent circuitry.

FIG. 7 shows a conventional current sample and hold circuit, includingan operational amplifier (op amp) OA1, a standard threshold MOStransistor device M1 operated as a switch, and a hold capacitor C_(H).The sample and hold circuit feeds a load switch ML and a load resistanceR_(L) during an active portion of a HOLD signal. The switch M1 isoperated under the control of a sampling signal SAMP input to the gateof switch M1. When the sampling signal SAMP is active, i.e., at a logic1, switch M1 allows the output of the op amp OA1 to pass and charge thehold capacitor C_(H). The load switch is operated under the control ofthe HOLD signal.

The op amp OA1 itself is a conventional device capable of a full outputrange from 0 volts up to the full level of the power supply, even with a1 volt power supply. However, because of the ON threshold voltage ofswitch M1, the range of the charge voltage V_(CH) passed by switch M1and charged on the hold capacitor C_(H) is limited to between about 0and 0.3 volts. Thus, switch M1 allows only about 30% of the availablesignal range of 0 to 1.0 volts provided by the 1 volt voltage supply topass and charge the hold capacitor C_(H). Even if switch M1 were to be adevice having a lower ON threshold voltage improving the range of thecharge voltage V_(CH) across the hold capacitor C_(H), increased leakagecurrent through switch M1 in the OFF condition would disadvantageouslydegrade the accuracy of the current sampling circuit. This is because itis difficult if at all possible for a low threshold voltage transistordevice to be turned OFF completely.

If the n-channel switch M1 in the circuit of FIG. 7 is a standardthreshold voltage device, i.e., having an ON threshold voltage of about0.7 volts, then the range of charge voltage V_(CH) will be only about 0to 0.3 volts. In this case, the charge voltage V_(CH) will reach theupper limit of its range at 0.3 volts.

If, on the other hand, switch M1 in the circuit of FIG. 7 is a lowthreshold voltage transistor device exhibiting an ON threshold voltageof, e.g., about 0.3 volts, the voltage range of the hold capacitor C_(H)will be considerably improved to be 0 to 0.7 volts and be capable ofcharging to any level within the range of the output voltage V_(O) ofthe op amp OA1, i.e., 0 to 0.7 volts. However, the increased ON leakageof the low threshold voltage switch M1 is nevertheless a disadvantage.Unfortunately, even when using a low threshold switch M1, the uppermostportion of the full range of the output voltage V_(O) of the op amp OA1,i.e., 0.7 to 1 volt, cannot be sampled.

Thus, when used as switches, low threshold MOS transistor devices canimprove considerably the range, of the output drive of a sample and holdcircuit. However, low threshold MOS transistor devices are generallymore costly to process than are normal threshold MOS transistor devices,and exhibit undesirable leakage current in the OFF condition as comparedto normal threshold MOS transistor devices. In fact, the low thresholdMOS transistor switch is a poor sample and hold element because it isdifficult and sometimes impossible to turn a low threshold MOS devicecompletely OFF. Furthermore, despite the lower threshold, low thresholdMOS transistor devices nevertheless constrict the available signal rangeto less than that provided by a very low voltage power supply.

One conventional technique `bootstraps` the gate drive voltage of theMOS transistor switch to a value greater than the supply voltage. Thisworks for integrated circuit technologies that can function withoutbreakdown at these higher voltages, i.e., with signal voltages above thepower supply voltage, but cannot be utilized with very fine-lineintegrated circuit technologies such as 0.1 μm technology because of thesmaller scale and limited electrical capability of the wiring andcomponents. Therefore, bootstrapping of the gate drive voltage is not apreferred technique, particularly as it is not applicable to 0.1 μm andsmaller fine line technology.

Another conventional system is the well known "switched op amp", inwhich an entire amplifier is actively switched, i.e., turned ON tocharge the hold capacitor C_(H), and switched OFF during the hold phaseof the sample and hold operation. FIG. 8 shows a conventionalclosed-loop, switched op amp, voltage sample and hold circuit. In FIG.8, a closed-loop, non-inverting amplifier OA2 features an output stagethat can be tri-stated under control of a tri-state signal TR1. When nottri-stated, op amp OA2 charges hold capacitor C_(H). When tri-stated byan active or logic 1 state of tri-state signal TR1, the charge voltageV_(CH) developed across the hold capacitor C_(H) before the op amp OA2was tri-stated provides a stable output sample of the input voltageV_(IN).

The conventional closed-loop, switched op amp, voltage sample and holdcircuit shown in FIG. 8 provides rail-to-rail sampling outputs even whensufficient logic drive is not available for MOS transistor switches.Unfortunately, the output stage of the op amp OA2 must be shut downcarefully. For instance, any mismatch in timing between the n-channelshutoff and the p-channel shut off of the amplifier output stage willinject an error charge onto the hold capacitor C_(H), disturbing itscharge voltage V_(CH) and thus the output of the sample and holdcircuit. It is possible for this disturbance to be quite large.

Thus, there is a need for sampling circuits which are capable ofaccurate and full-ranging operation with a very low power supplyvoltage.

SUMMARY OF THE INVENTION

A sampling circuit is disclosed which is particularly advantageous foruse with a very low power supply voltage. The sampling circuit includesan op amp, with an output voltage boost capacitor in communication witha first output of the op amp. A pre-charge circuit pre-charges theoutput voltage boost capacitor to provide a boosted output voltage.

A method of sampling an input signal is also disclosed wherein an outputvoltage boost capacitor is pre-charged to a boost voltage level. A firstoutput of the op amp is switched to a first state to charge a holdcapacitor, then switched to a second state to allow the hold capacitorto hold the charge. The output of the op amp boosts the output signal byvoltage level on the output voltage boost capacitor to provide a boostedoutput signal.

BRIEF DESCRIPTION OF THE DRAWINGS

Features and advantages of the present invention will become apparent tothose skilled in the art from the following description with referenceto the drawings, in which:

FIG. 1 shows, in a first embodiment of the present invention, a currentsampling circuit for use with a very low voltage power supply.

FIG. 2 shows a circuit for generating the reference voltage V_(x) forthe circuit shown in FIG. 1.

FIG. 3 shows, in a second embodiment of the present invention, a voltagesampling circuit for use with a very low voltage power supply.

FIG. 4 shows, in an alternative to the second embodiment of the presentinvention, a voltage sampling circuit for use with a very low voltagepower supply.

FIG. 5A shows, in a third embodiment of the present invention, a voltagesampling circuit for use with a very low voltage power supply.

FIG. 5B is a timing diagram for the circuit shown in FIG. 5A.

FIG. 6A shows a conventional circuit using a p-channel MOSFET device asa switch in a circuit utilizing a very low power supply voltage.

FIG. 6B shows a conventional circuit using an n-channel MOSFET device asa switch in a circuit utilizing a very low power supply voltage.

FIG. 7 shows a conventional current sampling circuit.

FIG. 8 shows a conventional closed-loop switched op amp sample and holdcircuit.

DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS

The present invention combines the functions of a sample and holdcircuit with those of a current copier or dynamic current mirror circuitto provide an advantageous sampling circuit which can operate with avery low power supply voltage.

In a typical current copier or dynamic current mirror circuit, an inputcurrent is applied to the drain of a metal oxide semiconductor (MOS)transistor device while its gate is driven by a feedback circuit to thevoltage level necessary to sustain that input drain current. The valueof the gate voltage is not of concern as long as the applied draincurrent can indeed be achieved and sustained by the level of the gatevoltage. The use of a current copier in a sampling circuit according tothe present invention provides a full-ranging output capability up tothe level of even a very low power supply, e.g., a 1 volt source.

First Embodiment

FIG. 1 shows a current sampling circuit utilizing a current copieraccording to a first embodiment of the present invention. Thisembodiment includes an op amp OA3, a MOS transistor switch M1, and ahold capacitor C_(H) in a similar configuration to the conventionalcircuit shown in FIG. 8. However, in FIG. 1 a pre-charge circuit 100 isadded to the output of the hold capacitor C_(H) to boost the level ofthe voltage at the gate of a current storage MOS transistor M3. Currentstorage MOS transistor M3 operates as a dynamic current mirror.

The pre-charge circuit 100 includes an n-channel MOS transistor M2, anoutput voltage boost capacitor C_(s), and a p-channel MOS transistor M4.The n-channel and p-channel MOS transistors M2, M4 are standardthreshold voltage devices.

The p-channel MOS transistor M4 is operated as a switch under thecontrol of inverse pre-charge signal /PR input to its gate, and then-channel MOS transistor M2 is operated as a switch under the control ofpre-charge signal PR input to its gate.

Pre-charge signal PR and the inverse of pre-charge signal /PR aresimultaneously active and simultaneously inactive. Thus, switch M2,which is controlled by pre-charge signal M2, and switch M4, which iscontrolled by the inverse pre-charge signal /PR, are closedsimultaneously by the simultaneously active pre-charge signals PR and/PR, and are opened simultaneously by the simultaneously inactivepre-charge signals PR and /PR.

The negative node of the output voltage boost capacitor C_(S) is furtherconnected to the positive node of the hold capacitor C_(H), and thepositive node of the output voltage boost capacitor C_(S) is furtherconnected to the gate of the current storage MOS transistor M3. Thesource of the current storage MOS transistor M3 is grounded, while itsdrain is fed back to the non-inverting input of op amp OA3.

The source of switch M4 is connected to the very low power supplyvoltage V_(SUPPLY), while its drain is connected to the positive node ofthe output voltage boost capacitor C_(S). Switch M4 provides aswitchable electrical path between the positive node of the outputvoltage boost capacitor C_(S) and the very low power supply voltageV_(SUPPLY).

The source of switch M2 is connected to a reference voltage V_(X).Switch M2 provides a switchable electrical path between the referencevoltage V_(X) and the negative node of the output voltage boostcapacitor C_(S).

The inverting input of the op amp OA3 is connected to common-modevoltage V_(COM), which is a convenient circuit common-mode voltage,e.g., 0.7 volts.

The output current of the circuit of FIG. 1 drives a load, generallydepicted at L, which may be connected to the supply voltage V_(SUPPLY)as shown, to ground, or to other circuitry (not shown). The current tothe load L is switched by an ideal switch SW1 in known ways.

In operation, the output of op amp OA3 charges the hold capacitor C_(H)when switch M1 is turned ON by a positive or logic high level ofsampling signal SAMP. However, as discussed above, the ON thresholdvoltage of switch M1 limits the voltage range of the signal passed fromthe op amp OA3 to between 0 and about 0.7 volts using standard thresholdtechnology. When switches M2 and M4 are turned ON, the negative node ofthe output voltage boost capacitor C_(S) is charged to approximately thelevel of the reference voltage V_(X), and its positive node is chargedto approximately the level of the very low voltage power supplyV_(SUPPLY). Thus, the pre-charge circuit 100 boosts the 0 to 0.3 voltoutput from switch M1 to a voltage level higher than the thresholdvoltage of the current storage MOS transistor device M3 such that theentire output range of the op amp OA3 is utilized by the samplingcircuit.

FIG. 2 shows an example of a circuit for generating reference voltageV_(X), which is the voltage to which the negative node of the outputvoltage boost capacitor Cs is charged before sampling commences. Ann-channel MOS transistor M6 is connected with its drain and gateconnected to the power supply voltage V_(SUPPLY), and its source forminga current source through a load 202. The voltage level of the source ofthe n-channel MOS transistor M6 is about equal to the supply voltageV_(SUPPLY) minus the threshold voltage of the n-channel MOS transistorM6. The threshold voltage of the n-channel MOS transistor M6 should beapproximately equal to the threshold voltage of the current storage MOStransistor M3. Thus, if a standard threshold voltage device is used asthe current storage MOS transistor M3 (as in the present embodiment),then the n-channel MOS transistor M6 should also be a standard thresholdvoltage device. Accordingly, in the disclosed embodiment, the referencevoltage V_(X) is about 0.3 volts.

    V.sub.SUPPLY -V.sub.T,N =1.0v-0.7v=0.3v

When the pre-charge signals PR and /PR are active at the gates ofswitches M2, M4, respectively (FIG. 1), output voltage boost capacitorCs is charged to a boost voltage V_(cs) about equal to:

    V.sub.CS =V.sub.SUPPLY -V.sub.X

Using a reference voltage V_(x) as shown in FIG. 2, V_(cs) becomes equalto the ON threshold voltage of n-channel MOS transistor M6, or about 0.7volts.

    V.sub.CS =V.sub.T,n =0.7v

During the time that the pre-charge signals PR and /PR are active,sampling signal SAMP is inactive and thus switch M1 is OFF. Thereafter,pre-charge signals PR and /PR go inactive, i.e., pre-charge signal PRgoes to a logic low state and inverse pre-charge signal /PR goes to alogic high state. Switches M2 and M4 are then turned OFF. Accordingly,the output voltage boost capacitor C_(S) is charged to about 0.7 volts.

After the output boost voltage capacitor C_(S) is pre-charged, samplingsignal SAMP is asserted to turn switch M1 ON to commence sampling of theinput signal I_(in) input to the non-inverting input of op amp OA3. Theoutput of the op amp OA3 is allowed to charge the hold capacitor C_(H)in such a way that the total voltage appearing at the gate of currentstorage MOS transistor M3 is whatever voltage is necessary to sustainits drain current, which is equal to I_(in). The total voltage at thecurrent storage MOS transistor M3 is represented by both the chargevoltage V_(CH) across the hold capacitor C_(H) and the boost voltageV_(CS) across the output voltage boost capacitor C_(S).

    V.sub.gate,M3 ≅V.sub.CH +V.sub.CS

    ≈V.sub.CH +V.sub.T,n

    =V.sub.CH +0.7v

Certain key results are to be noted. For instance, if the currentstorage MOS transistor M3 is a standard threshold device, it wouldrequire a gate voltage greater than V_(T),n (about 0.7 volts) in orderto sustain appreciable current. The "boost" of the charge voltage V_(CH)raises the 0 to 0.3 volt range output from the hold capacitor C_(H) to ahigher voltage range above the threshold voltage of the current storageMOS transistor M3 and thus to be within the operating range of thecurrent storage MOS transistor M3. The gate voltage V_(gate),M3 of thecurrent storage MOS transistor M3 is boosted by about 0.7 volts asfollows.

    V.sub.gate,M3 ≈V.sub.CH +V.sub.T,n =V.sub.CH +0.7v

Thus, current storage MOS transistor M3 can be driven successfully whenthe charge voltage V_(CH) across the hold capacitor C_(H) issupplemented with the 0.7 volt boost voltage V_(CS). Thus, the outputdrive of the disclosed sampling circuit is enhanced not by extending therange of voltages that switch M1 can pass, but rather by shifting thatrange to a more useful level with respect to driving current storage MOStransistor M3.

A common alternative to this approach involves boosting the voltagelevel at the gate of switch M1 to a level above the supply voltage.While this may extend the range of voltages that switch M1 can pass, itcan only be accomplished if the relevant integrated circuit technologycan avoid the breakdown which might occur when the gate voltage is at alevel higher than that of the power supply. For advanced sub-micronprocesses such as 0.1 μm technology, a very low voltage power supply of1 volt would essentially preclude such an option.

The parasitic capacitance of the gate of the current storage MOStransistor M3 will reduce the charge voltage V_(CH) by charge sharingwith the output voltage boost capacitor C_(S). In this case, thereference voltage V_(X) may be chosen to be closer in value to (or evenequal to) ground potential to provide a higher boost voltage V_(CS)pre-charged on the output voltage boost capacitor C_(S). The outputvoltage boost capacitor C_(S) should be chosen to be much greater invalue than the parasitic capacitance of the gate of the current storageMOS transistor M3.

The range of the input current I_(IN) and dimensions of the currentstorage MOS transistor M3 must be suitably chosen to correspond to therange of the allowable voltage input to the gate of the current storageMOS transistor M3, i.e., to remain within the range of V_(CH) +V_(CS).The dynamic range of the low voltage current sampling circuit will thenbe essentially only limited by the gate-referred noise of the currentstorage MOS transistor M3 and the total available signal swing at thegate of the current storage MOS transistor M3. In the disclosedembodiment, this total available signal swing is about:

    1.0v-0.7v=0.3v

The current storage MOS transistor M3 may be either a standard thresholdor a low threshold voltage MOS transistor device. However, even if thecurrent storage MOS transistor M3 is a low threshold voltage device asopposed to a standard threshold voltage device, this provides noparticular advantage. For instance, if the current storage MOStransistor M3 has a lower or low threshold voltage of about 0.5 or 0.3volts, respectively, then switch M4 should be replaced by an n-channelMOS transistor driven by control signal PR, and the reference voltageV_(x) should be set to about zero volts. This will result in anavailable gate swing at the gate of the current storage MOS transistorM3 of between 0.3 volts and 0.6 volts, allowing operation but wastingthe voltage range from about 0.6 to 1.0 volts.

Second Embodiment

FIG. 3 shows a second embodiment of the invention, and FIG. 4 shows analternative to the second embodiment.

In FIG. 3, an op amp OA4 receives an input voltage V_(IN) to be sampledat its non-inverting input node. The inverting node of op amp OA4 isconnected to the sample and hold circuit output voltage V_(OUT). Op ampOA4 is a conventional device able to accept rail-to-rail input, e.g., 0to 1 volt, with a 1 volt power supply.

The voltage sample and hold circuit shown in FIG. 3 further includesswitches M1 and M2, a hold capacitor C_(H), and an output voltage boostcapacitor C_(S) configured as in the circuit shown and described withrespect to FIG. 1.

However, rather than switch M4, the circuit in FIG. 3 includes aparallel combination of an n-channel MOS transistor device M5 and ap-channel MOS transistor device M6, both operating as switches, and bothconnected between the positive node of the output boost voltagecapacitor C_(s) and the non-inverting input of the op amp OA4. Switch M5is switched or operated under the control of the pre-charge signal PR,and switch M6 is switched under the control of the inversion of thepre-charge signal /PR. As shown, switch M2 is connected between thenegative node of the output voltage boost capacitor C_(S) and ground.Switches M5 and M6 are lower threshold voltage devices utilizing 0.35 μmintegrated circuit technology exhibiting a voltage threshold of 0.5volts for an n-channel device and 0.8 volts for a p-channel device.

During the pre-charge phase of the sampling, i.e., when the pre-chargesignal is active, switch M1 is OFF. The voltage input V_(IN) is passedthrough switches M5 and M6 to the positive node of the output voltageboost capacitor C_(S), within the allowable transmission ranges ofswitches M5 and M6. For instance, for a range of input voltages V_(IN)from 0 to 0.5 volts, the lower threshold voltage n-channel switch M5conducts, and V_(OUT) =V_(IN). For inputs from 0.8 volts to 1.0 volts,the lower threshold p-channel switch M6 conducts, and again V_(OUT)=V_(IN). However, with a range of input voltages V_(IN) from 0.5 voltsto 0.8 volts, the output voltage V_(OUT) is not equal to the inputvoltage V_(IN) since neither switch M5 or M6 conducts.

Assuming that the output voltage boost capacitor C_(S) is initiallydischarged using conventional means (not shown), if an input voltageV_(IN) in the range between 0.5 and 0.8 volts is applied, switch M5 willcharge the output to 0.5 volts, then slow down dramatically. For allintents and purposes, V_(OUT) will pin to about 0.5 volts. We will have,therefore, the output voltage boost capacitor C_(S) charged to a maximumof V_(CS) =0.5 volts.

During the sample phase, i.e., when the sampling signal SAMP is active,if the input voltage V_(IN) fell to within the allowable pass voltagerange of switches M5 and M6, then the output voltage V_(OUT) would beequal to the input voltage V_(IN), and the output voltage V_(O) of theop amp OA4 would need to be about 0 for V_(OUT) =V_(IN) to continue tobe true. When the sampling signal SAMP goes to logic low, e.g., duringthe hold phase, the output of the sampling circuit is held at thedesired voltage level, i.e., equal to the input voltage V_(IN).

If the input voltage V_(IN) is in the voltage range between 0.5 and 0.8volts, then in order for the output voltage V_(OUT) to be forced equalto the input voltage V_(IN) during an active sampling signal SAMP, theop amp OA4 output would need to rise by an amount equal to V_(O) =V_(IN)-0.5 volts. The maximum value of the output voltage V_(O) of the op ampOA4 is about 0.3 volts in this example, since inputs greater than about0.8 volts would be conducted to the output successfully by switch M6during the pre-charge phase PR. Switch M1 can handle V_(OA) in therequired range, so again the desired sample of the input voltage V_(IN)is generated.

The following Table I summarizes the final, hold states for variouslevels of the input voltage V_(IN).

                  TABLE I                                                         ______________________________________                                        V.sub.IN                                                                           V.sub.CH   V.sub.CS                                                                             V.sub.OUT                                                                              M5 ON M6 ON                                   ______________________________________                                        0.0  0.0        0.0    0.0      Y     N                                       0.1  0.0        0.1    0.1      Y     N                                       0.2  0.0        0.2    0.2      Y     N                                       0.51 0.01       0.5    0.51     N     N                                       0.79 0.29       0.5    0.79     N     N                                       0.80 0.0        0.8    0.80     N     Y                                       0.90 0.0        0.9    0.90     N     Y                                       1.00 0.0        1.0    1.00     N     Y                                       ______________________________________                                    

Note that in Table I the entries where the input voltage V_(IN) is equalto 0.51 and 0.79 are in the range where switches M5 and M6 do notconduct.

The preceding analysis and Table I shows that for input voltages V_(IN)which remain nearly constant from the end of the pre-charge stage PR tothe end of the sampling signal SAMP, all input voltages V_(IN) between 0volts and 1 volt are in the allowable sampling range. However, if theinput voltage V_(IN) changes, modification of the circuit may benecessary. For example, if the input voltage V_(IN) is decreasing, thenop amp OA4 output voltage V_(O) would have to be negative if the fullvalue of the input voltage V_(IN) was stored across the output voltageboost capacitor C_(S) during the pre-charge stage PR. To accommodate forthe changing values of the input voltage V_(IN), the source of switch M2should be connected to a non-zero voltage V_(OFFSET) as shown in thealternative circuit shown in FIG. 4.

FIG. 4 shows an alternative to the circuit shown in FIG. 3. In FIG. 4,an op amp OA5, switches M1, M5 and M6, hold capacitor C_(H), and outputvoltage boost capacitor C_(S) are configured as described with respectto FIG. 3. However, the source of switch M2 shown in FIG. 4 is connectedto an offset voltage V_(OFFSET) rather than to ground as in FIG. 3. Theoffset voltage V_(OFFSET) adjusts for the changes in the input voltageV_(IN) and is chosen based on system requirements.

In explanation, presume that the output voltage boost capacitor C_(S) isalways initially discharged by conventional separate switches (notshown) between each of the output voltage boost capacitor C_(S) andground.

For an offset voltage V_(OFFSET) chosen equal to 0.2 volts, Table IIshows the results of the circuit shown in FIG. 4.

                  TABLE II                                                        ______________________________________                                        V.sub.IN                                                                           V.sub.CH   V.sub.CS                                                                             V.sub.OUT                                                                              M5 ON M6 ON                                   ______________________________________                                        0.1  0.2        -0.1   0.1      Y     N                                       0.2  0.2        0.0    0.2      Y     N                                       0.5  0.2        0.3    0.5      Y     N                                       0.51 0.21       0.3    0.51     N     N                                       0.79 0.49       0.3    0.79     N     N                                       0.8  0.2        0.6    0.8      N     Y                                       0.9  0.2        0.7    0.9      N     Y                                       1.0  0.2        0.8    1.0      N     Y                                       0.0  0.2        -0.2   0.0      Y     N                                       ______________________________________                                    

Here, the output voltage V_(O) of op amp OA5 must be at least 0.2 voltsfor V_(OUT) =V_(IN) at the end of the sampling signal SAMP. Thus, theinput voltage V_(IN) can fall by 0.2 volts between the end of thepre-charge stage PR and the end of the sampling signal SAMP without theop amp OA5 being required to drive V_(O) negative. However, the oppositeproblem would then exist. In the entry in Table II for the input voltageV_(IN) =0.79 volts, it is seen that the charge voltage V_(CH) must beessentially at its highest allowable value, i.e., at 0.49 volts, tosuccessfully sample an input voltage V_(IN) of 0.79 volts. If the inputvoltage V_(IN) started at 0.79 volts at the end of the sampling signalSAMP, then rose to a higher voltage level, the sampling circuit wouldnot be able to achieve V_(OUT) =V_(IN) because the charge voltage V_(CH)would need to be higher than switch M1 can accommodate.

The circuit of FIG. 4 adjusts for this change in the input voltageV_(IN) during sampling by choosing an offset voltage V_(OFFSET) equal to0.1 volts in this example. The results of the circuit shown in FIG. 4with an offset voltage V_(OFFSET) equal to 0.1 volts is shown in TableIII.

The value of the offset voltage V_(OFFSET) is chosen based on thefollowing general rules:

(1) The maximum amount by which the input voltage V_(IN) can fallbetween the end of the pre-charge stage PR and the end of the samplingsignal SAMP is equal to the offset voltage V_(OFFSET).

(2) The maximum amount by which the input voltage V_(IN) can risebetween the end of the pre-charge stage PR and the end of the samplingsignal SAMP is:

    2V.sub.T,n -(V.sub.T,p +V.sub.OFFSET)

(3) For symmetrical operation, V_(OFFSET) is chosen as follows. ##EQU1##

Now suppose the sampling circuit of the present invention performsNyquist sampling. In this case, the sampling period is T_(S) seconds, sothe maximum input frequency is 1/2Ts Hertz. The maximum slew rate for asinusoidal input is:

    πV.sub.SUPPLY /2T.sub.s volts/sec

The maximum rise or fall of this sinusoidal input signal during thesampling stage pulse width τ is: ##EQU2##

Setting this quantity equal to the chosen value of the offset voltageV_(OFF) calculated above yields the condition for the duty cycle of thesampling pulse τ. ##EQU3##

For V_(RAIL) ≦V_(T),n +V_(T),p, this is the condition required for adead zone in the switch transfer characteristic.

In this example, this yields τ/T_(S) =0.064, i.e., the sampling pulse τcan be no more than 6.4% of the total sampling period T_(S). This resultis consistent with those of conventional sampling circuits.

Thus, the voltage sample and hold circuit according to the presentinvention allows a signal spanning the entire supply voltage to besampled without resorting to either switch gate voltage bootstrapping orlow threshold devices, which in turn allows implementation in very fineline (i.e., less than 0.1 μm) technologies with very low hold-modedroop.

Third Embodiment

FIG. 5A shows a third embodiment of the present invention, which is animprovement to the switched op amp configuration described previouslywith respect to the circuit of FIG. 8.

FIG. 5A shows a switched amplifier 500 comprising an op amp OA5 and twotri-state buffers 502, 504 forming separate output stages whichtri-state the output of the op amp OA5 under the control of tri-statecontrol signals TR1, TR2, respectively. The tri-state buffers 502, 504enter a high-impedance output tri-state mode when the tri-state controlsignals TR1, TR2 go to a logic HIGH. The tri-state buffers 502, 504 passtheir input signal when the tri-state control signals TR1, TR2 go to alogic LOW, i.e., place their outputs in a high impedance state. Ofcourse, other types of tri-state buffers, other logic components, and/ordevices having logic states different from those disclosed in thepresent embodiment may be implemented. The first tri-state buffer 502controls the feedback path of the output of the op amp OA5 back to theinverting input of the op amp OA5. The second tri-state buffer 504controls the passage of the output of the op amp OA5 to switch M1.

An output voltage boost capacitor C_(S) boosts the level of the voltageof the hold capacitor C_(H) similar to previous embodiments. Here,however, the positive node of the output voltage boost capacitor C_(S)is charged directly by the voltage V₀₁ output from the op amp OA5. Thepositive node is charged to the level of the output of the op amp OA5when the first tri-state buffer 502 is not tri-stated. An n-channel MOStransistor device M7 operating as a switch is connected between thenegative node of the output voltage boost capacitor C_(S) and areference swing voltage V_(SWING). Switch M7 is controlled by thepre-charge signal PR.

FIG. 5B is a timing diagram showing the timing of control signals in thecircuit of FIG. 5A during the pre-charge, sampling, hold and dischargecycles. In particular, FIG. 5B shows the pre-charge signal PR, thesampling signal SAMP, and the first and second tri-state signals TR1 andTR2, which control aspects of the circuit shown in FIG. 5A.

During the pre-charge cycle, waveform (a) of FIG. 5B shows that thepre-charge signal PR is at a logic high and thus turns switch M7 ON. Atthis time, the sampling signal SAMP is low as shown in waveform (b) ofFIG. 5B, and thus turns switch M1 OFF. Also during the pre-charge cycle,the first tri-state signal TR1 is low as shown in waveform (c) of FIG.5B, allowing the first tri-state buffer 502 to pass the output from opamp OA5 to the positive node of the output voltage boost capacitorC_(S). This charges the positive node to the level of the output voltageV₀₁. Waveform (d) of FIG. 5B shows that the second tri-state signal TR2is high during the pre-charge cycle thus tri-stating the output of thesecond tri-state buffer 504.

When in the pre-charge cycle, the first tri-state buffer 502 is allowedto pass its input signal and the op amp OA5 is configured as anon-inverting unity gain amplifier. The output voltage V_(OUT) is forcedequal to the input voltage V_(IN) via the feedback loop 506, and thecharge voltage V_(CH) across the hold capacitor C_(H) is set equal tothe swing voltage V_(SWING). This produces a voltage across the outputvoltage boost capacitor C_(S) of approximately V_(CS) =V_(IN)-V_(SWING).

During the sampling cycle the pre-charge signal PR is low, turningswitch M7 OFF and halting the charging of the negative node of theoutput voltage boost capacitor C_(S). The sampling signal SAMP is highduring the sampling cycle to turn switch M1 ON, and the second tri-statebuffer 504 is turned ON by tri-state signal TR2, to allow the outputvoltage V₀₂ of the op amp OA5 to charge the hold capacitor C_(H). Thefirst tri-state signal TRI tri-states the first tri-state buffer 502during the sampling cycle to place its output in a high impedance state.

When in the sampling cycle, the first tri-state buffer 502 tri-statesits output to a high impedance state and the second tri-state buffer 504allows its input signal to pass. Since the charge voltage V_(CH) wasequal to the swing voltage V_(SWING) and the output voltage V_(OUT)becomes equal to the input voltage V_(IN) in the pre-charge phase, theop amp OA5 must again produce the same voltage at its output to maintainV_(OUT) =V_(IN). If however the act of shutting OFF the first tri-statebuffer 502 somehow corrupted the charge voltage V_(CS) so that theoutput V_(OUT) no longer equals the input voltage V_(IN), the feedbackloop through the second tri-state buffer 504 can correct for anycorruption to the charge voltage V_(CH) to restore V_(OUT) =V_(IN) bymoving the charge voltage V_(CH) above or below the swing voltageV_(SWING) as necessary.

For example, if switch M1 has a lower threshold voltage of 0.5 volts,then the swing voltage V_(SWING) can be set to 0.25 volts, allowing a+/-0.25 volt correction to the charge voltage V_(CH). For a supplyvoltage of 1.0 volt, this is half the entire signal range which is avery substantial error correction capability.

The hold cycle represents a period of time when the sampled input outputby the sample and hold circuit is stable and can be utilized bysubsequent circuitry. During the hold cycle, the pre-charge signal PR islow turning switch M7 OFF, the sampling signal SAMP is low turningswitch M1 OFF, and both tri-state signals TRI and TR2 are HIGH totri-state the outputs of the first and second tri-state buffers 502,504.

The output voltage boost capacitor C_(S) is charged during thepre-charge cycle to a level equal to the output voltage V₀₁ of the opamp OA5 minus the swing voltage V_(SWING). The hold capacitor C_(H) ischarged during the sampling cycle to the level of the input voltageV_(IN). Both the output voltage boost capacitor C_(S) and the holdcapacitor C_(H) maintain their charge during the hold cycle, and aredischarged during the discharge cycle by switched connections to ground(not shown).

Thus, the third embodiment of the present invention adds a second stepto the sampling of an input signal, i.e., tri-state output stages forthe op amp OA5 to correct the potentially large error that may beproduced when the output stage of a conventional switched op amp istri-stated.

The hold capacitor C_(H) and the output voltage boost capacitor C_(S)can be non-linear capacitors, e.g., MOS gate capacitors. The value ofthe hold capacitor C_(H) depends upon other system considerations suchas thermal noise requirements and the desired bit-level accuracy. Theembodiments disclosed herein relate to a 10 or 11 bit accuracy inoutput. The output voltage boost capacitor is 1 picofarads (pF) in thedisclosed embodiments, which is suitably steady for about a 10 bitaccuracy in output.

Although lower or even low threshold devices can be used in the circuitof FIG. 5A, output droop of the low voltage sample and hold circuit willbe improved with the use of standard threshold voltage devices.

The present invention improves the accuracy of sampling circuitsoperating with very low power supplies because it improves the OFF-stateleakage and output droop usually associated with conventional devicesoperating with this low power supply. The present invention alsoimproves the range of the output of the sampling circuit.

While the invention has been described with reference to the exemplarypreferred embodiments thereof, those skilled in the art will be able tomake various modifications to the described embodiments of the inventionwithout departing from the true spirit and scope of the invention.

I claim:
 1. A sampling circuit, comprising:a switched amplifier having afirst output and a second output; an output voltage boost capacitor incommunication with said first output of said switched amplifier; and apre-charge circuit to pre-charge said output voltage boost capacitor tooffset an output voltage of said second output of said switchedamplifier.
 2. The sampling circuit according to claim 1, wherein:saidfirst output and said second output of said switched amplifier areswitched.
 3. The sampling circuit according to claim 2, wherein:saidswitched first and second outputs of said switched amplifier operateindependent of one another.
 4. The sampling circuit according to claim2, wherein:said first switched output and said second switched outputare each switched tri-state outputs.
 5. The sampling circuit accordingto claim 1, wherein:said pre-charge circuit pre-charges a node of saidoutput voltage boost capacitor to a voltage level output from said firstoutput of said switched amplifier.
 6. The sampling circuit according toclaim 1, further comprising:a hold capacitor in communication with saidswitched amplifier.
 7. The sampling circuit according to claim 6,wherein:said hold capacitor is in communication with said second outputof said switched amplifier.
 8. The sampling circuit according to claim6, wherein:said pre-charge circuit pre-charges a node of said outputvoltage boost capacitor to a voltage level pre-charged on said holdcapacitor.
 9. The sampling circuit according to claim 6, wherein:saidhold capacitor is a non-linear capacitor.
 10. The sampling circuitaccording to claim 1, wherein:said sampling circuit automaticallycorrects for any error in an output of said sampling circuit due toswitching of at least one of said first output and second output of saidswitched amplifier.
 11. The sampling circuit according to claim 1,wherein:said output voltage boost capacitor is a non-linear capacitor.12. A sampling circuit for operation with a very low power supply,comprising:sample and hold means, comprising a switched amplifier havinga first output and a second output, for sampling and holding an outputof said sampling circuit; output boost means in communication with saidfirst output of said switched amplifier, to boost said output of saidsampling circuit; and pre-charging means to pre-charge said output boostmeans to offset an output voltage of said second output of said switchedamplifier.
 13. A method of sampling an input signal,comprising:pre-charging an output voltage boost capacitor to a boostvoltage level; switching a first output of a switched amplifier to afirst state to charge a hold capacitor; switching said first output ofsaid switched amplifier to a second state to allow said hold capacitorto hold a charge; and boosting said output of said switched amplifier bysaid boost voltage level to provide an output signal.
 14. The method ofsampling according to claim 13, further comprising:operating a secondoutput of said switched amplifier independently of said first output ofsaid switched amplifier.
 15. The method of sampling according to claim14, further comprising:feeding said second output of said switchedamplifier back to a non-inverting input of said switched amplifier. 16.The method of sampling according to claim 13, wherein said pre-chargingcomprises:pre-charging a node of said output voltage boost capacitor toa voltage level output from said first output of said switchedamplifier.
 17. The method of sampling according to claim 13, whereinsaid pre-charging comprises:pre-charging a node of said output voltageboost capacitor to a voltage level pre-charged on said hold capacitor.18. The method of sampling according to claim 13, furthercomprising:automatically correcting for any error in said output signaldue to switching of said first output of said switched amplifier. 19.The method of sampling according to claim 5, wherein said pre-chargingcomprises:pre-charging a node of said output voltage boost capacitor toa voltage level selected to allow a range of correction to said outputsignal.
 20. A sampling circuit, comprising:a switched amplifier having afirst output and a second output; an output voltage boost capacitorhaving a first node operably connected to said first output; and apre-charge circuit operably connected to a second node of said outputvoltage boost capacitor to pre-charge voltage across said output voltageboost capacitor to approximately the difference between output voltageof said first output and a reference swing voltage.
 21. The samplingcircuit in accordance with claim 20, wherein:said pre-charging circuitcomprises:a switch being controlled by a pre-charge signal.
 22. Thesampling circuit in accordance with claim 20, further comprising:a holdcapacitor having a first node being operably connected to said secondnode of said output voltage boost capacitor and a second node beingoperably connected to ground; a switch positioned between a first nodeof said hold capacitor and said second output of said switchedamplifier, and being controlled by a sample signal to charge said holdcapacitor with output voltage of said second output of said switchedamplifier.
 23. The sampling circuit in accordance with claim 20,wherein:an input of said switched amplifier is operably connected tosaid first output of said switched amplifier to provide a unity gainamplifier.
 24. the sampling circuit in accordance with claim 20,wherein:said switched amplifier comprises: an op-amp; a first tri-statebuffer having an input and an output, said input of said first tri-statebuffer being operably connected to an output of said op-amp, said outputof said first tri-state buffer being said first output of said switchedamplifier; and a second tri-state buffer having an input and an output,said input of said second tip-state buffer being operably connected tosaid output of said op-amp, said output of said second tri-state bufferbeing said second output of said switched amplifier.
 25. The samplingcircuit in accordance with claim 20, further comprising:a dischargecircuit to discharge said hold capacitor and said output voltage boostcapacitor.
 26. The sampling circuit in accordance with claim 20,wherein:said hold capacitor is a non-linear capacitor.
 27. The samplingcircuit in accordance with claim 20, wherein:said output voltage boostcapacitor is a non-linear capacitor.
 28. A sampling circuit,comprising:a switched amplifier, comprising:an op-amp; a first tri-statebuffer having an input being operably connected to an output of saidop-amp and an output to provide a first output of said switchedamplifier, and a second tri-state buffer having an input being operablyconnected to said output of said op-amp and an output to provide asecond output of said switched amplifier, wherein said first outputbeing operably connected an input of said op-amp to provide a unity gainamplifier; an output voltage boost capacitor having a first node beingoperably connected to said first output of said switched amplifier; apre-charge circuit connected to a second node of said output voltageboost capacitor to pre-charge voltage across said output voltage boostcapacitor to approximately the difference between output voltage of saidfirst output and a reference swing voltage; a hold capacitor having afirst node being operably connected to said second node of said outputvoltage boost capacitor and a second node being operably connected toground; and a switch positioned between a first node of said holdcapacitor and said second output of said switched amplifier.